SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15003
DESCRIPTION
·With TO-3 package
·Complement to type MJ15004
·Excellent safe operating area
APPLICATIONS
·For high power audio,disk head positioners
and other linear applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
I
E
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Emitter current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
140
140
5
20
5
-25
250
200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
0.7
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=5A; I
B
=0.5A
I
C
=5A ; V
CE
=2V
V
CE
=140V; I
B
=0
V
CE
=140V; V
BE(off)
=1.5V
T
C
=150
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=2V
V
CE
=50Vdc,t=1 s, Nonrepetitive
V
CE
=100Vdc,t=1 s, Nonrepetitive
I
E
=0 ; V
CB
=10V;f=1.0MHz
I
C
=0.5A ; V
CE
=10V;f=0.5MHz
2
25
5
MIN
140
MJ15003
SYMBOL
V
CEO(SUS)
V
CE
(sat)
V
BE
I
CEO
I
CEX
I
EBO
h
FE
TYP.
MAX
UNIT
V
1.0
2.0
0.25
0.1
2.0
0.1
150
V
V
mA
mA
mA
I
s/b
Second breakdown collector current
With base forward biased
A
1
1000
pF
MHz
C
OB
f
T
Output capacitance
Transition frequency
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJ15003
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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