SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1075
DESCRIPTION
·With TO-126 package
·High collector-peak current
·Low collector saturation voltage
APPLICATIONS
·For audio frequency output
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
a
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-50
-40
-5
-2
-4
1.2
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-2mA ;I
B
=0
I
C
=-1mA ;I
E
=0
I
C
=-3.0A; I
B
=-0.3A*
I
C
=-2.0A ;I
B
=-0.2A*
V
CB
=-50V; I
E
=0
V
CE
=-10V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V*
2
2
2SB1075
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
f
T
C
OB
MIN
-40
-50
TYP.
MAX
UNIT
V
V
-1.0
-1.5
-1
-100
-10
50
220
150
40
V
V
µA
µA
µA
2
I
C
=-0.5A ; V
CE
=-5V*
2
MHz
pF
I
E
=0; f=1MHz ; V
CB
=-20V
Note:
* pulse test
2
h
FE
Classifications
P
50-100
Q
80-160
R
120-220
2
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