SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1102
DESCRIPTION
·With TO-220 package
·Complement to type 2SD1602
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-7
-4
-8
40
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collecto cut-off current
DC current gain
Diode forward voltage
CONDITIONS
I
C
=-25mA ,I
B
=0
I
E
=-50mA ,I
C
=0
I
C
=-2A; I
B
=-4mA
I
C
=-4A; I
B
=-40mA
I
C
=-2A; I
B
=-4mA
I
C
=-4A; I
B
=-40mA
V
CB
=-60V; I
E
=0
V
CE
=-50V; I
B
=0
I
C
=-2A ; V
CE
=-3V
I
D
=4A;
1000
MIN
-80
-7
2SB1102
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat -1
V
CEsat -2
V
BEsat-1
V
BEsat-2
I
CBO
I
CEO
h
FE
V
D
TYP.
MAX
UNIT
V
V
-1.5
-3.0
-2.0
-3.5
-100
-10
20000
3.0
V
V
V
V
µA
µA
V
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-2A I
B1
=-I
B2
=-4mA
0.8
4.0
1.0
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1102
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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