SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220F package
·Complement to type 2SD1666
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·For low-frequency and general-purpose
amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SB1133
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
25
150
-40~150
Open emitter
Open base
Open collector
CONDITIONS
MAX
-60
-60
-6
-3
-8
2
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-5mA ;R
BE
=;
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-2A; I
B
=-0.2A
I
C
=-0.5A ; V
CE
=-5V
V
CB
=-40V ;I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.5A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V; f=1MHz
I
C
=-0.5A ; V
CE
=-5V
70
20
MIN
-60
-60
-6
2SB1133
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
TYP.
MAX
UNIT
V
V
V
-1.0
-1.0
-100
-100
280
V
V
µA
µA
110
40
pF
MHz
h
FE-1
Classifications
Q
70-140
R
100-200
S
140-280
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1133
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1133
4
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