SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1145
DESCRIPTION
·With TO-220F package
·High DC current gain.
·DARLINGTON
·Low collector saturation voltage
APPLICATIONS
·For high current driver and power
driver applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-6
-3
-5
20
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=-100µA; I
E
=0
I
C
=-5mA; I
B
=0
I
C
=-1.5A ; I
B
=-3mA
I
C
=-1.5A ; I
B
=-3mA
V
CB
=-120V;I
E
=0
V
EB
=-5V;I
C
=0
I
C
=-1.5A ; V
CE
=-3V
2000
MIN
-120
-120
2SB1145
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
-1.5
-2.0
-50
-3.0
V
V
µA
mA
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1145
Fig.2 Outline dimensions
3
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