SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1162
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD1717
·Excellent linearity of h
FE
·Wide area of safe operation (ASO)
·High transition frequency f
T
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-160
-5
-12
-20
3.5
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
120
150
-55~150
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-8A ;I
B
=-0.8A
I
C
=-8A ; V
CE
=-5V
V
CB
=-160V; I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-20mA ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
C
=-8A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
f=1MHz;V
CB
=-10V
20
60
20
MIN
2SB1162
SYMBOL
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
TYP.
MAX
-2.0
-1.8
-50
-50
UNIT
V
V
µA
µA
200
20
210
MHz
pF
h
FE-2
classifications
Q
60-120
S
80-160
P
100-200
2
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