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2SB1162

Description
Silicon PNP Power Transistors
File Size110KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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2SB1162 Overview

Silicon PNP Power Transistors

SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1162
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD1717
·Excellent linearity of h
FE
·Wide area of safe operation (ASO)
·High transition frequency f
T
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-160
-5
-12
-20
3.5
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
120
150
-55~150
W
UNIT
V
V
V
A
A

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