SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB656
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For use in power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-160
-5
-12
-4
125
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB656
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
SYMBOL
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA ;I
B
=0
-160
V
V
(BR)CBO
Collector-base breakdown voltage
I
C
=-1mA ;I
E
=0
-160
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-1mA ;I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-10A; I
B
=-1A
-3.0
V
I
CBO
Collector cut-off current
V
CB
=-160V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-0.1
mA
h
FE
DC current gain
I
C
=-1A ; V
CE
=-5V
60
200
f
T
Transition frequency
I
C
=-1A ; V
CE
=-10V
20
MHz
h
FE
Classifications
B
60-120
C
100-200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB656
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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