SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB755
·
DESCRIPTION
·With MT-200 package
·Complement to type 2SD845
·High transition frequency
·High breakdown voltage :V
CEO
=-150V(min)
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collectorl power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-5
-12
-1.2
120
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-0.1A; I
B
=0
I
E
=-10mA; I
C
=0
I
C
=-5 A;I
B
=-0.5 A
I
C
=-5A ; V
CE
=-5V
V
CB
=-150V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-10V
I
E
=0; V
CB
=-10V;f=1MHz
55
20
450
MIN
-150
-5
TYP.
2SB755
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE
f
T
C
OB
MAX
UNIT
V
V
-2.0
-1.5
-50
-50
160
V
V
µA
µA
MHz
pF
h
FE
classifications
R
55-110
O
80-160
2
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