SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB761 2SB761A
DESCRIPTION
·With TO-220C package
·Complement to type 2SD856/856A
·Low collector saturation voltage
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
2SB761
V
CBO
Collector-base voltage
2SB761A
2SB761
V
CEO
Collector-emitter voltage
2SB761A
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collectorl power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
-80
-5
-3
-5
35
150
-55~150
V
A
A
W
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SB761
I
C
=-30mA; I
B
=0
2SB761A
I
C
=-3 A;I
B
=-0.375 A
I
C
=-3A ; V
CE
=-4V
2SB761
2SB761A
V
CE
=-60V; V
BE
=0
CONDITIONS
SYMBOL
2SB761 2SB761A
MIN
-60
TYP.
MAX
UNIT
V
CEO
Collector-emitter
breakdown voltage
V
-80
-1.2
-1.8
V
V
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
I
CES
Collector
cut-off current
-200
V
CE
=-80V; V
BE
=0
V
CE
=-60V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-3A ; V
CE
=-4V
40
10
-300
-1
250
µA
I
CEO
I
EBO
h
FE-1
h
FE-2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
µA
mA
Switching times
t
on
t
off
Turn-on time
I
C
=-1A ; I
B1
=-I
B2
=-0.1 A
Turn-off time
2.0
µs
0.5
µs
h
FE-1
classifications
R
40-90
Q
70-150
P
120-250
2
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