SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB860
DESCRIPTION
·With TO-220C package
·Complement to type 2SD1137
APPLICATIONS
·Low frequency power amplifier TV
vertical deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
40
150
-45~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-100
-4
-4
-5
1.8
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB860
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-50mA; R
BE
=:
I
E
=-1mA; I
C
=0
I
C
=-1 A;I
B
=-0.1 A
V
CE
=-80V; R
BE
=:
V
EB
=-3.5V; I
C
=0
I
C
=-0.5A ; V
CE
=-4V
I
C
=-50mA ; V
CE
=-4V
50
25
MIN
-100
-4
-1.0
-100
-50
250
350
TYP.
MAX
UNIT
V
V
V
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CEO
I
EBO
h
FE-1
h
FE-2
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB860
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB860
4
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