SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB919
DESCRIPTION
·With TO-220C package
·Complement to type 2SD1235
·Low collector saturation voltage
·Large current capacity
APPLICATIONS
·Large current switching of relay drivers,
high-speed inverters,converters
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-50~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-60
-30
-6
-8
-15
1.75
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-1mA; R
BE
=;
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-3A; I
B
=-0.15A
V
CB
=-40V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-4A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-5V
70
30
120
MIN
-30
-60
-6
2SB919
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
V
V
-0.5
-0.1
-0.1
280
V
mA
mA
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Turn-off time
I
C
=-4A ; V
CC
=-10V
I
B1
=-I
B2
=-0.2A;R
L
=2.5B
0.1
0.2
0.03
µs
µs
µs
h
FE-1
Classifications
Q
70-140
R
100-200
S
140-280
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB919
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB919
4
京公网安备 11010802033920号
EEWORLD
