SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB975
DESCRIPTION
·With TO-220 package
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·Low frequency power amplification
·Low speed power switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
1.5
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-100
-100
-5
-8
40
W
UNIT
V
V
V
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB975
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=-30mA ;I
B
=0
I
C
=-1mA ;I
E
=0
I
E
=-5mA ;I
C
=0
I
C
=-3A; I
B
=-3mA
I
C
=-3A; I
B
=-3mA
V
CB
=-100V; I
E
=0
V
CE
=-50V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-3A ; V
CE
=-2V
2000
MIN
-100
-100
-5
-1.5
-2.0
-1
-100
-5.0
15000
TYP.
MAX
UNIT
V
V
V
V
V
µA
µA
mA
SYMBOL
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB975
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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