SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4105
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
7
4
8
1.5
40
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=5mA ;R
BE
=:
I
C
=1mA; I
E
=0
I
E
=1mA; I
C
=0
I
C
=2A; I
B
=0.4A
I
C
=2A; I
B
=0.4A
V
CB
=400V ;I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.4A ; V
CE
=5V
I
C
=2A ; V
CE
=5V
I
C
=10mA ; V
CE
=5V
I
C
=0.4A ; V
CE
=10V
f=1MHz ; V
CB
=10V
15
10
10
MIN
400
500
7
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
ob
2SC4105
TYP.
MAX
UNIT
V
V
V
0.8
1.5
10
10
50
V
V
µA
µA
20
50
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=3A, I
B1
=0.6A
I
B2
=-1.2A; V
CC
=200V
R
L
=66.6B
0.5
2.5
0.3
µs
µs
µs
h
FE-1
Classifications
L
15-30
M
20-40
N
30-50
2
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