SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4111
DESCRIPTION
·With TO-3PL package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output application
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
150
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
700
7
10
22
3.5
3.5
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Eemitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
CONDITIONS
I
E
=1mA ;I
C
=0
I
C
=7A ;I
B
=2.5A
I
C
=7A ;I
B
=2.5A
V
CB
=750V; I
E
=0
I
CBO
Collector cut-off current
V
CB
=1500V; I
E
=0
h
FE-1
h
FE-2
f
T
DC current gain
DC current gain
Transition frequency
I
C
=1A ; V
CE
=5V
I
C
=7A ; V
CE
=5V
I
C
=1A ; V
CE
=10V;f=0.5MHz
5
3
2
MIN
7
2SC4111
SYMBOL
V
(BR)EBO
V
CEsat
V
BEsat
TYP.
MAX
UNIT
V
5.0
1.5
10
1
V
V
µA
mA
8
MHz
Switching times
t
s
t
f
Storage time
Fall time
12
0.6
µs
µs
I
C
=6A ;I
B1
=-I
B2
=1.7A
L
Leak
=5µH
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4111
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4111
4
京公网安备 11010802033920号
EEWORLD
