SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4231
DESCRIPTION
·With ITO-220 package
·Switching power transistor
·High voltage ,high speed
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1200
800
7
2
4
1
2
30
150
-55~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
4.16
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4231
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
At rated volatge
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
t
on
t
s
t
f
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Turn-on time
Storage time
Fall time
I
C
=1;I
B1
=0.2A;
I
B2
=0.4A;R
L
=250C
V
BB2
=4V
At rated volatge
I
C
=1A ; V
CE
=5V
I
C
=1mA ; V
CE
=5V
I
C
=0.2A ; V
CE
=10V
8
7
8
0.5
3.5
0.3
MHz
µs
µs
µs
0.1
mA
0.1
mA
CONDITIONS
I
C
=0.1A;I
B
=0
I
C
=1A; I
B
=0.2A
I
C
=1A ;I
B
=0.2A
MIN
800
1.0
1.5
TYP.
MAX
UNIT
V
V
V
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4231
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
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