SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4233
·Wit
DESCRIPTION
With TO-220C package
·High breakdown voltage
·Switching power transistor
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1200
800
7
3
6
1
2
60
150
-55~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction case
MAX
2.08
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4233
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
At rated voltage
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
At rated voltage
I
C
=1.5A ; V
CE
=5V
I
C
=1mA ; V
CE
=5V
I
C
=0.3A ; V
CE
=10V
8
7
8
MHz
100
µA
100
µA
CONDITIONS
I
C
=0.1A; R
BE
=9
I
C
=1.5A; I
B
=0.3A
I
C
=1.5A; I
B
=0.3A
MIN
800
1.0
1.5
TYP.
MAX
UNIT
V
V
V
SYMBOL
V
CEO(SUS)
V
CE(sat)
V
BE(sat)
I
CBO
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
V
BB2
=4V; I
C
=1.5A
I
B1
=0.3A;I
B2
=0.6A
R
L
=170C
0.5
3.5
0.3
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4233
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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