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2SC4278

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size120KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
Download Datasheet Parametric Compare View All

2SC4278 Overview

POWER TRANSISTOR

2SC4278 Parametric

Parameter NameAttribute value
stateActive
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD175 BD177 BD179
DESCRIPTION
・With
TO-126 package
・Complement
to type BD176/178 /180
APPLICATIONS
・For
medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25
℃)
SYMBOL
固电
导½
PARAMETER
CONDITIONS
BD175
V
CBO
Collector-base voltage
V
CEO
HA
INC
Emitter -base voltage
Collector current (DC)
ES
NG
BD177
BD179
BD175
BD177
BD179
Open emitter
MIC
E
OR
UCT
ND
O
VALUE
45
60
80
45
60
80
UNIT
V
Collector-emitter voltage
Open base
V
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Open collector
5
3
7
V
A
A
W
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
30
150
-65~150

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