SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5287
DESCRIPTION
·With TO-3PN package
·High voltage,high speed switching
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
900
550
7
5
10
2.5
80
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=1.8A; I
B
=0.36A
I
C
=1.8A; I
B
=0.36A
V
CB
=800V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=1.8A ; V
CE
=4V
I
E
=0 ; V
CB
=10V;f=1MHz
I
E
=-0.35A ; V
CE
=12V
10
MIN
550
2SC5287
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
TYP.
MAX
UNIT
V
0.5
1.2
100
100
25
50
6
V
V
µA
µA
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=1.8A; R
L
=139C
I
B1
=0.27A; I
B2
=-0.9A
V
CC
=250V
0.7
4.0
0.5
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5287
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5287
4
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