SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2908
DESCRIPTION
·With TO-3PN package
·Low collector saturation voltage
APPLICATIONS
·For use in power amplifier and
switching circuits applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25
Collector power dissipation
Derate above 25
Junction temperature
Storage temperature
0.4
150
-55~150
W/
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
100
12
5.0
10
2.5
50
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2908
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=3.0A ;I
B1
=0.3A;L=1.0mH
I
C
=3A ;I
B
=300mA
I
C
=3A ;I
B
=300mA
V
CB
=100V; I
E
=0
V
CE
=100V;V
BE
=-1.5V
V
EB
=5V; I
C
=0
I
C
=0.3A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
60
40
MIN
100
1.0
1.5
10
10
10
320
TYP.
MAX
UNIT
V
V
V
µA
µA
µA
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=3A; V
CC
=30V
I
B1
=0.3A ,I
B2
=-0.3A
RL=10@
0.5
2.0
1.0
µs
µs
µs
h
FE-1
Classifications
M
60-120
L
100-200
K
160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2908
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2908
4
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