SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD941F
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
140
140
7
3
6
14
150
-50~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA; I
B
=0
I
E
=1mA; I
C
=0
I
C
=1A; I
B
=0.2A
I
C
=1A; I
B
=0.2A
V
CB
=140V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=0.2A ; V
CE
=4V
I
C
=1A ; V
CE
=4V
I
C
=0.25A ; V
CE
=10V
40
15
3
MIN
140
7
BD941F
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
V
0.7
1.5
50
50
250
V
V
µA
µA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BD941F
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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