SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type MJE15031
·High transition frequency
·DC current gain specified to 4.0 amperes
h
FE
= 40 (Min) @ I
C
= 3.0 Adc
h
FE
= 20 (Min) @ I
C
= 4.0 Adc
APPLICATIONS
·Designed for use as high–frequency
drivers in audio amplifiers
.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
MJE15030
Absolute maximum ratings (Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
a
=25
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
150
5
8
16
2
2
W
50
150
-65~150
UNIT
V
V
V
A
A
A
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
R
th j-A
PARAMETER
Thermal resistance ; junction to case
Thermal resistance , junction to ambient
MAX
2.5
62.5
UNIT
/W
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA; I
B
=0
I
C
=1A ;I
B
=0.1A
I
C
=1A ; V
CE
=2V
V
CB
=150V; I
E
=0
V
CE
=150V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ; V
CE
=2V
I
C
=2A ; V
CE
=2V
I
C
=3A ; V
CE
=2V
I
C
=4A ; V
CE
=2V
I
C
=0.5A;V
CE
=10V;f=10MHz
40
40
40
20
30
MIN
150
MJE15030
SYMBOL
V
CEO(SUS)
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
h
FE-4
f
T
TYP.
MAX
UNIT
V
0.5
1.0
10
0.1
10
V
V
µA
mA
µA
MHz
2
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