SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1667
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·For use in high power audio amplifier
applications and high voltage switching
regulator circuits
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=75
Open emitter
Open base
Open collector
CONDITIONS
VALUE
90
90
7
4
50
175
-55~175
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=50mA ;I
B
=0
I
E
=1mA ;I
C
=0
I
C
=3A; I
B
=0.3A
I
C
=3A; I
B
=0.3A
V
CB
=90V
;
I
E
=0
V
EB
=7V; I
C
=0
I
C
=1A ; V
CE
=4V
I
C
=0.5A ; V
CE
=10V
40
MIN
90
7
2SC1667
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BE sat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
1.0
1.5
0.1
0.1
200
10
V
V
mA
mA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1667
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
京公网安备 11010802033920号
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