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BUH1015HI

Description
14 A, 700 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size145KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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BUH1015HI Overview

14 A, 700 V, NPN, Si, POWER TRANSISTOR

BUH1015HI Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current14 A
Maximum Collector-Emitter Voltage700 V
Processing package descriptionISOWATT218, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor7
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUH1015HI
DESCRIPTION
·With TO-3PML package.
·High voltage.
·High switching speed.
APPLICATIONS
·Horizontal deflection for colour TV
and monitors.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current -peak
Base current
Base current -peak
Collector power dissipation
Junction temperature
Storage temperature
t
p
<5ms
T
C
=25
t
p
<5ms
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1500
700
10
14
18
8
11
70
150
-65~150
UNIT
V
V
V
A
A
A
A
W
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