SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUH713
DESCRIPTION
·With TO-3PML package
·High voltage,high speed
APPLICATIONS
·Horizontal deflection for colour TV’s
and monitors.
·Switching mode power supplies
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Base current (Pulse)
Total power dissipation
Operating junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1300
700
10
10
20
5
10
57
150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
2.2
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=100mA
I
E
=10mA
I
C
=7A ;I
B
=1.5A
I
C
=7A ;I
B
=1.5A
V
CE
=1300V
;
V
BE
=0
T
j
=125
V
EB
=5V; I
C
=0
I
C
=7A ; V
CE
=5V
8
MIN
700
10
TYP.
BUH713
SYMBOL
V
CEO(sus)
V
EBO
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE
MAX
UNIT
V
V
1.5
1.3
1
2
100
V
V
mA
µA
Switching times
t
s
t
f
Storage time
I
C
=7A;I
B1
=1.5A;I
B2
=3.5A;
V
CC
=400V
Fall time
140
210
ns
2.1
3.1
µs
2
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