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AS58LC1001DG-25/IT

Description
EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32, PLASTIC, SOP-32
Categorystorage    storage   
File Size325KB,21 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric Compare View All

AS58LC1001DG-25/IT Overview

EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32, PLASTIC, SOP-32

AS58LC1001DG-25/IT Parametric

Parameter NameAttribute value
Parts packaging codeSOIC
package instructionSOP,
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time250 ns
JESD-30 codeR-PDSO-G32
length20.45 mm
memory density1048576 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height3 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width11.3 mm
Maximum write cycle time (tWC)15 ms
Base Number Matches1
EEPROM
Austin Semiconductor, Inc.
128K x 8 EEPROM
Radiation Tolerant
AVAILABLE AS MILITARY
SPECIFICATIONS
Austin Semiconductor Space Level
Austin Semiconductor Class ‘B’
AS58LC1001
PIN ASSIGNMENT
(Top View)
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ),
32-Pin SOP (DG)
RDY/BUSY\
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
RES\
WE\
A13
A8
A9
A11
OE\
A10
CE\
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
FEATURES
High speed: 250ns and 300ns
Data Retention: 10 Years
Low power dissipation, active current (20mW/MHz (TYP)),
standby current (100μW(MAX))
Single +3.3V +.3V power supply
Data Polling and Ready/Busy Signals
Erase/Write Endurance (10,000 cycles in a page mode)
Software Data protection Algorithm
Data Protection Circuitry during power on/off
Hardware Data Protection with RES pin
Automatic Programming:
Automatic Page Write: 15ms (MAX)
128 Byte page size
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS58LC1001 is a 1 Megabit CMOS
Electrically Erasable Programmable Read Only Memory (EEPROM)
organized as 131, 072 x 8 bits. The AS58LC1001 is capable or in
system electrical Byte and Page reprogrammability.
The AS58LC1001 achieves high speed access, low power
consumption, and a high level of reliability by employing advanced
MNOS memory technology and CMOS process and circuitry
technology and CMOS process and circuitry technology.
This device has a 128-Byte Page Programming function to make its
erase and write operations faster. The AS58LC1001 features Data
Polling and a Ready/Busy signal to indicate completion of erase and
programming operations.
This EEPROM provides several levels of data protection.
Hardware data protection is provided with the RES pin, in addition to
noise protection on the WE signal and write inhibit during power on
and off. Software data protection is implemented using JEDEC
Optional Standard algorithm.
The AS58LC1001 is designed for high reliability in the most
demanding applications. Data retention is specified for 10 years and
erase/write endurance is guaranteed to a minimum of 10,000 cycles in
the Page Mode.
OPTIONS
MARKINGS
-25
-30
F
No. 306
SF No. 305
DCJ No. 508
DG
XT
IT
Timing
250ns access
300ns access
Packages
Ceramic Flat Pack
Radiation Shielded Ceramic FP*
Ceramic SOJ
Plastic SOP
Operating Temperature Ranges
-Military (-55
o
C to +125
o
C)
-Industrial (-40
o
C to +85
o
C)
*
NOTE:
Package lid is connected to ground (Vss).
For more products and information
please visit our web site at
www.austinsemiconductor.com
AS58LC1001
Rev. 1.1 10/09
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1

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AS58LC1001DG-25/IT AS58LC1001DG-25/XT AS58LC1001DG-30/IT AS58LC1001DG-25/883C AS58LC1001DG-30/883C AS58LC1001DG-30/XT
Description EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32, PLASTIC, SOP-32 EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32, PLASTIC, SOP-32 EEPROM, 128KX8, 300ns, Parallel, CMOS, PDSO32, PLASTIC, SOP-32 EEPROM, 128KX8, 250ns, Parallel, CMOS, PDSO32, PLASTIC, SOP-32 EEPROM, 128KX8, 300ns, Parallel, CMOS, PDSO32, PLASTIC, SOP-32 EEPROM, 128KX8, 300ns, Parallel, CMOS, PDSO32, PLASTIC, SOP-32
Parts packaging code SOIC SOIC SOIC SOIC SOIC SOIC
package instruction SOP, SOP, SOP, SOP, SOP, SOP,
Contacts 32 32 32 32 32 32
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 3A001.A.2.C EAR99 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 250 ns 250 ns 300 ns 250 ns 300 ns 300 ns
JESD-30 code R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
length 20.45 mm 20.45 mm 20.45 mm 20.45 mm 20.45 mm 20.45 mm
memory density 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
Memory IC Type EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
memory width 8 8 8 8 8 8
Number of functions 1 1 1 1 1 1
Number of terminals 32 32 32 32 32 32
word count 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
character code 128000 128000 128000 128000 128000 128000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C 125 °C 85 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C -55 °C -40 °C -55 °C -55 °C -55 °C
organize 128KX8 128KX8 128KX8 128KX8 128KX8 128KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP SOP SOP SOP SOP SOP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Programming voltage 3 V 3 V 3 V 3 V 3 V 3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 3 mm 3 mm 3 mm 3 mm 3 mm 3 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL MILITARY INDUSTRIAL MILITARY MILITARY MILITARY
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
width 11.3 mm 11.3 mm 11.3 mm 11.3 mm 11.3 mm 11.3 mm
Maximum write cycle time (tWC) 15 ms 15 ms 15 ms 15 ms 15 ms 15 ms
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