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GBLA01X2G

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size205KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

GBLA01X2G Overview

Bridge Rectifier Diode,

GBLA01X2G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ECCN codeEAR99
Diode typeBRIDGE RECTIFIER DIODE
JESD-609 codee3
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceMatte Tin (Sn)
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
GBLA005 thru GBLA10
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- High case dielectric strength
- Typical IR less than 0.1uA
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Single Phase Bridge Rectifiers
- UL Recognized File # E-326243
GBL
MECHANICAL DATA
Case:GBL
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal:Matte
tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:As
marked
Weight:2.0
gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
@T
C
=50℃
@T
A
=40℃
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@4A
Maximum reverse current @ rated VR
Typical junction capabitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300u sec, 1% duty cycle
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
GBLA GBLA GBLA GBLA GBLA GBLA GBLA
005
50
35
50
01
100
70
100
02
200
140
200
04
400
280
400
4
3
120
59
1.0
5
500
95
10
47
- 55 to + 150
- 55 to + 150
40
O
06
600
420
600
08
800
560
800
10
1000
700
1000
Unit
V
V
V
A
I
FSM
I
2
T
V
F
I
R
Cj
R
θjL
R
θjA
T
J
T
STG
A
A
2
S
V
uA
pF
C/W
O
O
C
C
Document Number:DS_D1312020
Version:B13

GBLA01X2G Related Products

GBLA01X2G GBLA02X2 GBLA005X2G GBLA06X2 GBLA06X2G GBLA04X2G GBLA04X2
Description Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-609 code e3 e3 e3 e3 e3 e3 e3
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 - -
Maker - Taiwan Semiconductor Taiwan Semiconductor - - Taiwan Semiconductor Taiwan Semiconductor

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