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X28HC256PM-12

Description
32KX8 EEPROM 5V, 120ns, PDIP28, PLASTIC, DIP-28
Categorystorage    storage   
File Size492KB,17 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

X28HC256PM-12 Overview

32KX8 EEPROM 5V, 120ns, PDIP28, PLASTIC, DIP-28

X28HC256PM-12 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDIP
package instructionDIP, DIP28,.6
Contacts28
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time120 ns
Other features100000 ENDURANCE WRITE CYCLES; 100 YEARS DATA RETENTION
command user interfaceNO
Data pollingYES
Data retention time - minimum100
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDIP-T28
JESD-609 codee0
length36.45 mm
memory density262144 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize32KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
page size128 words
Parallel/SerialPARALLEL
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height4.82 mm
Maximum standby current0.0005 A
Maximum slew rate0.06 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
switch bitYES
width15.24 mm
Maximum write cycle time (tWC)5 ms
Base Number Matches1
X28HC256
256k, 32k x 8-Bit
Data Sheet
September 21, 2011
FN8108.3
5V, Byte Alterable EEPROM
The X28HC256 is a second generation high performance
CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s
proprietary, textured poly floating gate technology, providing
a highly reliable 5V only nonvolatile memory.
The X28HC256 supports a 128-byte page write operation,
effectively providing a 24µs/byte write cycle, and enabling
the entire memory to be typically rewritten in less than 0.8
seconds. The X28HC256 also features DATA Polling and
Toggle Bit Polling, two methods of providing early end of
write detection. The X28HC256 also supports the JEDEC
standard Software Data Protection feature for protecting
against inadvertent writes during power-up and power-down.
Endurance for the X28HC256 is specified as a minimum
1,000,000 write cycles per byte and an inherent data
retention of 100 years.
Features
• Access time: 70ns
• Simple byte and page write
- Single 5V supply
- No external high voltages or V
P-P
control circuits
- Self-timed
- No erase before write
- No complex programming algorithms
- No overerase problem
• Low power CMOS
- Active: 60mA
- Standby: 500µA
• Software data protection
- Protects data against system level inadvertent writes
• High speed page write capability
• Highly reliable Direct Write
cell
- Endurance: 1,000,000 cycles
- Data retention: 100 years
• Early end of write detection
- DATA polling
- Toggle bit polling
• Pb-free available (RoHS compliant)
Block Diagram
X BUFFERS
LATCHES AND
DECODER
A
0
TO A
14
ADDRESS
INPUTS
Y BUFFERS
LATCHES AND
DECODER
I/O BUFFERS
AND LATCHES
256kBIT
EEPROM
ARRAY
I/O
0
TO I/O
7
CE
OE
WE
V
CC
V
SS
CONTROL
LOGIC AND
TIMING
DATA INPUTS/OUTPUTS
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas Inc. 2005-2007, 2010, 2011. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
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