HiPerFAST
TM
IGBT with Diode
IXGK 60N60C2D1 V
CES
IXGX 60N60C2D1 I
C25
V
CE(sat)
C2-Class High Speed IGBTs
t
fi(typ)
= 600 V
= 75 A
= 2.5 V
= 35 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
F110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C (limited by leads)
T
C
= 110°C
T
C
= 110°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Ω
Clamped inductive load @ V
CE
≤
600 V
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
75
60
48
300
I
CM
= 100
V
V
V
V
A
A
A
A
A
TO-264 AA
(IXGK)
(TAB)
G
C
E
PLUS247
(IXGX)
(TAB)
G = Gate
E = Emitter
C = Collector
Tab = Collector
480
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
Mounting torque, TO-264
TO-264
PLUS247
1.13/10 Nm/lb.in.
10
6
300
g
g
°C
Features
•
Very high frequency IGBT and
anti-parallel FRED in one package
•
Square RBSOA
•
High current handling capability
•
MOS Gate turn-on for drive simplicity
•
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low I
RM
Applications
•
Switch-mode and resonant-mode
power supplies
•
Uninterruptible power supplies (UPS)
•
DC choppers
•
AC motor speed control
•
DC servo and robot drives
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
3.0
T
J
= 25°C
T
J
= 125°C
5.0
650
5
±100
T
J
= 25°C
T
J
= 125°C
2.1
1.8
2.5
V
μA
mA
nA
V
V
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250
μA,
V
CE
= V
GE
V
CE
= V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= 50 A, V
GE
= 15 V
Note 1
Advantages
•
Space savings (two devices in one
package)
•
Easy to mount with 1 screw
© 2005 IXYS All rights reserved
DS99044B(11/05)
IXGK 60N60C2D1
IXGX 60N60C2D1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
40
58
3900
280
97
146
28
50
18
Inductive load, T
J
= 25°C
°
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 2.0
Ω
25
95 150
35
0.48
18
25
0.9
130
80
1.2
S
pF
pF
pF
nC
nC
nC
Dim.
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
TO-264 AA Outline
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
= 50 A; V
CE
= 10 V,
Note 1
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
I
C
= 50 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
ns
ns
ns
ns
0.8 mJ
ns
ns
mJ
ns
ns
mJ
Inductive load, T
J
= 125°C
°
I
C
= 50 A, V
GE
= 15 V
V
CE
= 400 V, R
G
= R
off
= 2.0
Ω
0.26 K/W
0.15
K/W
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247 Outline
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Test Conditions
I
F
= 60 A, V
GE
= 0 V,
Note 1
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
2.1
1.4
8.3
35
V
A
ns
0.65 K/W
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
T
J
= 150°C
I
F
= 60 A, V
GE
= 0 V, -di
F
/dt = 100 A/μ T
J
= 100°C
V
R
= 100 V
I
F
= 1 A; -di/dt = 200 A/ms; V
R
= 30 V
Note 1: Pulse test, t
≤
300
μs,
duty cycle
≤
2 %
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
6,727,585
6,759,692
6771478 B2
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 1. Output Characteristics
@ 25 Deg. C
1
00
90
80
V
G E
= 15V
13V
11
V
9V
1
75
1
50
200
V
G E
= 15V
13V
11
V
Fig. 2. Extended Output Characteristics
@ 25 deg. C
9V
I
C
- Amperes
I
C
- Amperes
70
60
50
40
30
20
1
0
0
0.5
1
1
.5
2
2.5
7V
1
25
1
00
75
50
7V
5V
25
0
5V
1
1
.5
2
2.5
3
3.5
4
4.5
3
3.5
V
CE
- Volts
V
CE
- Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
1
00
90
80
70
V
GE
= 15V
13V
11
V
9V
1
.1
1
.2
Fig. 4. Temperature Dependence of V
CE(sat)
V
C E (sat)
- Normalized
V
G E
= 15V
1
0.9
0.8
0.7
I
C
= 100A
I
C
- Amperes
7V
60
50
40
30
20
1
0
0
0.5
1
1
.5
2
2.5
3
3.5
I
C
= 50A
5V
I
C
= 25A
0.6
0.5
25
50
75
1
00
1
25
1
50
V
CE
- Volts
T
J
- Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
5
4.5
4
T
J
= 25
º
C
200
1
75
1
50
Fig. 6. Input Admittance
V
CE
- Volts
3.5
3
2.5
2
1
.5
1
5
6
7
8
9
1
0
1
1
1
2
1
3
1
4
1
5
I
C
- Amperes
1
25
1
00
75
50
25
0
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
T
J
= 125
º
C
25
º
C
-40
º
C
I
C
= 100A
50A
25A
V
GE
- Volts
© 2005 IXYS All rights reserved
V
GE
- Volts
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 7. Transconductance
1
00
90
80
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Dependence of E
off
on R
G
6
5
T
J
= 125
º
C
V
GE
= 15V
V
CE
= 400V
I
C
= 100A
E
off
- milliJoules
g
f s
- Siemens
70
60
50
40
30
20
1
0
0
0
25
4
I
C
= 75A
3
2
1
0
I
C
= 50A
I
C
= 25A
50
75
1
00
1
25
1
50
1
75
200
2
4
6
8
1
0
1
2
1
4
1
6
I
C
- Amperes
R
G
- Ohms
Fig. 9. Dependence of E
off
on I
C
5
R
G
= 2 Ohms
R
G
= 10 Ohms - - - - -
4
5
Fig. 10. Dependence of E
off
on Temperature
R
G
= 2 Ohms
R
G
= 10 Ohms - - - - -
4
T
J
= 125
º
C
I
C
= 100A
E
off
- MilliJoules
3
E
off
- milliJoules
V
G E
= 15V
V
C E
= 400V
V
G E
= 15V
V
C E
= 400V
I
C
= 75A
3
2
T
J
= 25
º
C
1
2
I
C
= 50A
1
I
C
= 25A
25
50
75
1
00
1
25
0
20
30
40
50
60
70
80
90
1
00
0
I
C
- Amperes
T
J
- Degrees Centigrade
Fig. 11. Gate Charge
1
5
V
C E
= 300V
I
C
= 50A
I
G
= 10mA
1
0000
Fig. 12. Capacitance
f = 1M Hz
C ies
1
000
C oes
1
2
9
6
Capacitance - pF
V
G E
- Volts
1
00
C res
3
0
0
20
40
60
80
1
00
1
20
1
40
1
60
1
0
0
5
1
0
1
5
20
25
30
35
40
Q
G
- nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
V
CE
- Volts
IXGK 60N60C2D1
IXGX 60N60C2D1
Fig. 13. Maximum Transient Thermal Resistance
0.275
0.25
R
( t h ) J C
- ºC / W
0.225
0.2
0.175
0.15
0.125
0.1
0.075
0.05
0.025
1
10
100
1000
Pulse Width - milliseconds
© 2005 IXYS All rights reserved
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