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IXTU02N50D

Description
Power Field-Effect Transistor, 0.2A I(D), 500V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size205KB,3 Pages
ManufacturerIXYS
Environmental Compliance  
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IXTU02N50D Overview

Power Field-Effect Transistor, 0.2A I(D), 500V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN

IXTU02N50D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-251AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance30 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251AA
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)0.8 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
High Voltage
Power MOSFET
IXTY02N50D
IXTU02N50D
IXTP02N50D
D
V
DSX
I
D25
R
DS(on)
=
=
500V
200mA
30
N-Channel
TO-252 (IXTY)
G
S
G
S
D (Tab)
TO-251 (IXTU)
Symbol
V
DSX
V
DGX
V
GSX
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-251
TO-220
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
J
T
C
= 25C
T
A
= 25C
Maximum Ratings
500
500
20
30
200
800
25
1.1
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
0.35
0.40
3.00
V
V
V
V
mA
mA
W
W
C
C
C
°C
°C
Nm/lb.in.
g
g
g
G
G
D
S
D (Tab)
TO-220AB (IXTP)
DS
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Low R
DS(on)
HDMOS
TM
Process
• Rugged Polysilicon Gate Cell Structure
• Fast Switching Speed
Advantages
• Easy to Mount
• Space Savings
• High Power Density
Applications
Level Shifting
Triggers
Solid State Relays
Current Regulators
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSX
V
GS(off)
I
GSX
I
DSX(off)
R
DS(on)
I
D(on)
V
GS
= -10V, I
D
= 25A
V
DS
= 25V, I
D
= 25A
V
GS
=
20V,
V
DS
= 0V
V
DS
= V
DSX
, V
GS
= -10V
V
GS
= 0V, I
D
= 50mA, Note 1
V
GS
= 0V, V
DS
= 25V, Note 1
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
500
- 2.5
- 5.0
V
V
100
nA
10
A
250
A
20
250
30

mA
© 2017 IXYS CORPORATION, All Rights Reserved
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