PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
V
DSS
I
D25
R
DS(on)
= 300 V
= 88 A
≤
40 mΩ
Ω
TO-247 (IXTH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
External lead current limit
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150° C, R
G
= 4
Ω
T
C
= 25° C
Maximum Ratings
G
300
300
±20
±30
88
75
220
60
60
2.0
10
600
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
G
D
D (TAB)
S
TO-264 (IXTK)
D
S
D (TAB)
TO-3P (IXTQ)
G
D
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-247
TO-264
TO-3P & TO-268
300
260
S
(TAB)
TO-268 (IXTT)
1.13/10 Nm/lb.in.
6.0
10
5.5
g
g
g
G = Gate
S = Source
G
S
D = Drain
TAB = Drain
D (TAB)
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
300
2.5
5.0
±100
100
1
40
V
V
nA
µA
mA
m
Ω
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
DS99129E(12/05)
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C unless otherwise specified)
Min.
Typ.
Max.
45
60
6300
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
950
190
25
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
R
G
= 3.3
Ω
(External)
24
96
25
180
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
44
90
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.21° C/W
TO-247 and TO-3P
TO-264
0.21
0.15
°
C/W
°
C/W
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
R
thCS
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
88
220
1.5
250
3.3
A
A
V
ns
µC
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 25 A, -di/dt = 100 A/µs
V
R
= 100 V, V
GS
= 0 V
Characteristic Curves
Fig. 1. Output Characteristics
@ 25
º
C
90
80
70
V
GS
= 10V
9V
8V
200
180
160
140
V
GS
= 10V
9V
8V
Fig. 2. Extended Output Characteristics
@ 25
º
C
I
D
- Amperes
I
D
- Amperes
60
50
40
30
20
10
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
6V
7V
120
100
80
60
40
20
0
0
2
4
6
8
6V
5V
10
12
14
16
18
20
7V
V
D S
- Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
V
D S
- Volts
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Fig. 3. Output Char acte r is tics
@ 125
º
C
90
80
70
V
GS
= 10V
9V
8V
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0
1
2
3
4
5
6
7
8
9
-50
-25
0
25
50
75
100
125
150
I
D
= 88A
I
D
= 44A
V
GS
= 10V
Fig. 4. R
DS(on
)
Nor m alize d to 0.5 I
D25
V alue vs . Junction Te m pe r atur e
I
D
- Amperes
60
50
40
30
20
10
0
7V
6V
5V
V
D S
- V olts
Fig. 5. R
DS(on)
Nor m alize d to
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
20
40
60
80
100 120 140 160 180 200
T
J
= 25ºC
R
D S (on)
- Normalized
T
J
- Degrees Centigrade
Fig. 6. Dr ain Cur r e nt vs . Cas e
Te m pe r atur e
90
80
70
External Lead C urrent Lim it
0.5 I
D25
V alue vs . I
D
V
GS
= 10V
R
D S (on)
- Normalized
I
D
- Amperes
T
J
= 125ºC
60
50
40
30
20
10
0
I
D
- A mperes
-50
-25
T
C
- Degrees Centigrade
0
25
50
75
100
125
150
Fig. 7. Input Adm ittance
160
140
120
100
80
60
40
20
0
4
4.5
5
5.5
6
6.5
7
7.5
8
T
J
= 125ºC
25ºC
-40ºC
100
90
80
Fig. 8. Transconductance
g
f s
- Siemens
70
60
50
40
30
20
10
0
0
I
D
- Amperes
T
J
= -40ºC
25ºC
125ºC
20
40
60
80
100
120
140
160
180
V
G S
- Volts
I
D
- Amperes
© 2006 IXYS All rights reserved
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
Fig. 9. Source Current vs.
Source-To-Drain Voltage
280
240
200
10
9
8
7
V
DS
= 150V
I
D
= 44A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
V
G S
- Volts
T
J
= 125ºC
T
J
= 25ºC
160
120
80
40
0
0.4
0.6
0.8
6
5
4
3
2
1
0
V
S D
- Volts
1
1.2
1.4
1.6
0
20
40
60
80
100
120
140
160
180
Q
G
- nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
1000
T
J
= 150ºC
R
DS(on)
Limit
T
C
= 25ºC
25µs
Fig. 11. Capacitance
10000
Capacitance - picoFarads
C iss
I
D
- Amperes
100
1ms
10ms
10
DC
100µs
1000
C oss
f = 1MHz
C rss
100
0
5
10
15
1
V
D S
- Volts
20
25
30
35
40
10
V
D S
- Volts
100
1000
Fig. 13. Maximum Transient Thermal Resistance
1.00
R
(th) J C
- ºC / W
0.10
0.01
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 88N30P IXTK 88N30P
IXTQ 88N30P IXTT 88N30P
TO-247 (IXTH) Outline
TO-3P (IXTQ) Outline
TO-268 (IXTT) Outline
1
2
3
Terminals:
1. Gate
2,4. Drain
3. Source
Terminals:
1. Gate
2,4. Drain
3. Source
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A
1
A
2
2.2
2.6
b
1.0
1.4
1.65
2.13
b
1
b
2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P
3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-264 (IXTK) Outline
© 2006 IXYS All rights reserved
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