ZXMP6A18DN8QTC datasheet, PDF - EEWORLD Datasheet

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ZXMP6A18DN8QTC: DescriptionPower Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8; CategoryDiscrete semiconductor The transistor; File Size226KB，8 Pages; ManufacturerDiodes Incorporated; Environmental Compliance

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ZXMP6A18DN8QTC Overview

Power Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

ZXMP6A18DN8QTC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	38.2 mJ
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	3.7 A
Maximum drain-source on-resistance	0.055 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	23 A
Guideline	AEC-Q101
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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ZXMP6A18DN8

DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET

Product Summary

ADVANCE INFORMATION

(BR)DSS

-60V

DS(on)

Max

55mΩ @ V

= -10V

= +25°C

-4.8A

Features

•

Low On-Resistance

Fast Switching Speed

Low Threshold

Low Gate Drive

Low Profile SOIC Package

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

PPAP capable (Note 4)

Description

This MOSFET is designed to minimize the on-state resistance and yet

maintain superior switching performance, making it ideal for high-

efficiency power management applications.

•

Mechanical Data

Applications

•

Disconnect Switches

Motor Drive

•

SO-8

•

Case: SO-8

Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish; Solderable per MIL-STD-202,

Method 208

Weight: 0.074 grams (Approximate)

Top View

Equivalent Circuit

Ordering Information

(Notes 4 & 5)

Product

ZXMP6A18DN8TA

ZXMP6A18DN8TC

ZXMP6A18DN8QTC

Notes:

Compliance

Standard

Automotive

Case

SO-8

Quantity per reel

500

2,500

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SO-8

6A18D

ZXMP6A18D = Product Type Marking Code

YYWW = Date Code Marking

YY = Year (ex: 11 = 2011)

WW = Week (01 - 53)

ZXMP6A18DN8

Document Number DS33592 Rev 3 - 2

1 of 8

www.diodes.com

December 2014

ZXMP6A18DN8QTC Related Products

	ZXMP6A18DN8QTC
Description	Power Field-Effect Transistor, 3.7A I(D), 60V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	compliant
ECCN code	EAR99
Factory Lead Time	15 weeks
Other features	HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	38.2 mJ
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	3.7 A
Maximum drain-source on-resistance	0.055 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
JESD-609 code	e3
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	23 A
Guideline	AEC-Q101
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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