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K9K1G08B0B-GCB0

Description
Flash, 128MX8, 30ns, PBGA63
Categorystorage    storage   
File Size1MB,41 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K9K1G08B0B-GCB0 Overview

Flash, 128MX8, 30ns, PBGA63

K9K1G08B0B-GCB0 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionFBGA, BGA63,10X12,32
Reach Compliance Codecompliant
Maximum access time30 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B63
memory density1073741824 bit
Memory IC TypeFLASH
memory width8
Humidity sensitivity level1
Number of departments/size8K
Number of terminals63
word count134217728 words
character code128000000
Maximum operating temperature70 °C
Minimum operating temperature
organize128MX8
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA63,10X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
page size512 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.7 V
Certification statusNot Qualified
ready/busyYES
Department size16K
Maximum standby current0.00005 A
Maximum slew rate0.02 mA
Nominal supply voltage (Vsup)2.7 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNAND TYPE
Base Number Matches1
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
FLASH MEMORY
Document Title
128M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
0.1
Initial issue.
1. Note 1 ( Program/Erase Characteristics) is added( page 13 )
2. NAND Flash Technical Notes is changed.
-Invalid block -> initial invalid block ( page 15 )
-Error in write or read operation ( page 16 )
-Program Flow Chart ( page 16 )
3. Vcc range is changed
-1.7V~1.95V ->1.65V~1.95V
4. 2.7V device is added
5
. Multi plane operation and Copy-Back Program are not supported with 1.8V
device.
Draft Date
Mar. 17th 2003
Oct. 11th 2004
Remark
Advance
Advance
0.2
1.0
1. The flow chart to creat the initial invalid block table is changed.
May 6th. 2005
Preliminary
May 30th 2005 Final
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
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