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BCR3KM-8

Description
TRIAC, 400V V(DRM), 3A I(T)RMS,
CategoryAnalog mixed-signal IC    Trigger device   
File Size139KB,10 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

BCR3KM-8 Overview

TRIAC, 400V V(DRM), 3A I(T)RMS,

BCR3KM-8 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationSINGLE
Maximum DC gate trigger current15 mA
Maximum DC gate trigger voltage1.5 V
JESD-30 codeR-PSFM-T3
Maximum leakage current2 mA
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum rms on-state current3 A
Off-state repetitive peak voltage400 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device typeTRIAC
Base Number Matches1
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR3KM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3KM
OUTLINE DRAWING
10
±
0.3
6.5
±
0.3
3
±
0.3
Dimensions in mm
2.8
±
0.2
15
±
0.3
φ
3.2
±
0.2
14
±
0.5
3.6
±
0.3
1.1
±
0.2
1.1
±
0.2
0.75
±
0.15
E
0.75
±
0.15
2.54
±
0.25
2.54
±
0.25
4.5
±
0.2
➀➁➂
2.6
±
0.2
½
Measurement point of
case temperature
.................................................................. 3A
q
V
DRM
................................................................. 600V
q
I
FGT
!
, I
RGT
!
, I
RGT
#
................... 15mA (10mA)
½3
q
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
q
I
T (RMS)
T
1
TERMINAL
T
2
TERMINAL
➂ ➂
GATE TERMINAL
TO-220FN
APPLICATION
Control of heater such as electric rice cooker, electric pot
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
½1
Non-repetitive peak off-state
voltage
½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=111°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Mar. 2002
T
a
=25°C, AC 1 minute, T
1
· T
2
· G terminal to case
½1.
Gate open.
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