2SA1213
Elektronische Bauelemente
RoHS Compliant Product
PNP Silicon
Medium Power Transistor
SOT-89
D
Dimensions In Millimeters
Dimensions In Inches
Min
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
0.060TYP
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
1.BASE
2.COLLECTOR
3.EMITTER
E1
D1
A
Symbol
A
b
b1
c
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.500TYP
2.900
0.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
E
D
D1
E
E1
b1
*Features
b
L
e
e1
C
e
e1
L
3.100
1.100
0.114
0.035
0.122
0.043
Collector Current -2A
Low power dissipation 0.5W
*Stucture
Epitaxial planar type.
PNP silicon transistor.
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Tamb=25
¥
unless
otherwise
conditions
specified
MIN
-50
-50
-5
-0.1
-0.1
70
20
-0.5
-1.2
V
V
240
MAX
UNIT
V
V
V
μA
μA
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE 1
Test
Ic=-100μA
，
I
E
=0
I
C
= -10mA , I
B
=0
I
E
=-100μA， I
C
=0
V
CB
=-50 V , I
E
=0
V
EB
=-5 V ,
I
C
=0
V
CE
=-2V, I
C
= -0.5A
V
CE
=-2V, I
C
= -2A
I
C
=-1A, I
B
= -0.05A
I
C
=-1A, I
B
= -0.05A
DC current gain
h
FE 2
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CEsat
V
BEsat
Transition frequency
f
T
V
CE
= -2V, I
C
=-0.5A
100
MHz
CLASSIFICATION OF h
FE
Ｏ
７０－１４０
Ｙ
１２０－２４０
Marking
http://www.SeCoSGmbH.com
NO、NY
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of
3
Embedded System
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