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DB101LS

Description
Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-LS, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size160KB,6 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance  
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DB101LS Overview

Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-LS, 4 PIN

DB101LS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-G4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage50 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
*
Good for automation insertion
Surge overload rating - 30 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 0.335 gram
DB101LS
THRU
DB107LS
DB-LS
.310 (7.9)
.290 (7.4)
.255 (6.5)
.245 (6.2)
.009
(0.229)
.013 (.330)
.003 (.076)
.410 (10.4)
.360 (9.4)
.060 (1.524)
.040 (1.016)
.346 (8.8)
.307 (7.8)
0.100 (2.55)
0.089 (2.25)
MECHANICAL DATA
* Epoxy: Device has UL flammability classification 94V-O
.042 (1.1)
.038 (1.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
resistive or inductive load.
.205 (5.2)
.195 (5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25 C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 40 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Current Squarad Time
Typical Thermal Resistance (Note 2)
R
q
JL
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@T
A
= 25
o
C
@T
A
= 125 C
o
o
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
I
2
t
R
q
JA
DB101LS DB102LS DB103LS DB104LS DB105LS DB106LS DB107LS UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
A
2
/Sec
0
3.7
40
15
-55 to + 150
C/W
0
T
J,
T
STG
C
SYMBOL
V
F
I
R
DB101LS DB102LS DB103LS DB104LS DB105LS DB106LS DB107LS UNITS
1.1
5.0
0.5
Volts
uAmps
mAmps
2010-05
REV:C
Note: 1.”Fully ROHS compliant”,”100% Sn plating(Pb-free).
2. Thermal Resistance: Mounted on PCB.
3. Available in Halogen-free epoxy by adding suffix -HF after the part nbr.

DB101LS Related Products

DB101LS DB105LS DB103LS DB107LS-C-HF DB104LS-C-HF
Description Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-LS, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-LS, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DB-LS, 4 PIN Rectifier Diode, Rectifier Diode,
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Base Number Matches 1 1 1 1 1
Is it lead-free? Lead free Lead free Lead free - -
Is it Rohs certified? conform to conform to conform to - -
package instruction R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 - -
Contacts 4 4 4 - -
Minimum breakdown voltage 50 V 600 V 200 V - -
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - -
Diode component materials SILICON SILICON SILICON - -
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - -
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 - -
JESD-609 code e3 e3 e3 - -
Maximum non-repetitive peak forward current 30 A 30 A 30 A - -
Number of components 4 4 4 - -
Phase 1 1 1 - -
Number of terminals 4 4 4 - -
Maximum operating temperature 150 °C 150 °C 150 °C - -
Minimum operating temperature -55 °C -55 °C -55 °C - -
Maximum output current 1 A 1 A 1 A - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - -
Peak Reflow Temperature (Celsius) 265 265 265 - -
Certification status Not Qualified Not Qualified Not Qualified - -
Maximum repetitive peak reverse voltage 50 V 600 V 200 V - -
surface mount YES YES YES - -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) - -
Terminal form GULL WING GULL WING GULL WING - -
Terminal location DUAL DUAL DUAL - -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -

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