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DB101LS-T

Description
Bridge Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size88KB,6 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Download Datasheet Parametric View All

DB101LS-T Overview

Bridge Rectifier Diode,

DB101LS-T Parametric

Parameter NameAttribute value
package instructionR-PDSO-G4
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage50 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage50 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
*
Good for automation insertion
Surge overload rating - 30 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 0.335 gram
SINGLE-PHASE GLASS PASSIVATED
SILICON BRIDGE RECTIFIER
DB101LS
THRU
DB107LS
DB-LS
.310 (7.9)
.290 (7.4)
.255 (6.5)
.245 (6.2)
.009
(0.229)
.013 (.330)
.003 (.076)
.410 (10.4)
.360 (9.4)
.060 (1.524)
.040 (1.016)
.346 (8.8)
.307 (7.8)
0.100 (2.55)
0.089 (2.25)
MECHANICAL DATA
* Epoxy: Device has UL flammability classification 94V-O
.042 (1.1)
.038 (1.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
resistive or inductive load.
.205 (5.2)
.195 (5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 40 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Current Squarad Time
Typical Thermal Resistance (Note 2)
R
JL
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per Bridge
Element at 1.0A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
@T
A
= 25
o
C
@T
A
= 125 C
o
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
I
2
t
R
JA
DB101LS DB102LS DB103LS DB104LS DB105LS DB106LS DB107LS UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
A
2
/Sec
0
3.7
40
15
-55 to + 150
C/W
0
T
J,
T
STG
C
SYMBOL
V
F
I
R
DB101LS DB102LS DB103LS DB104LS DB105LS DB106LS DB107LS UNITS
1.0
1.0
0.05
Volts
uAmps
mAmps
2014-11
REV:D
Note: 1.”Fully ROHS compliant”,”100% Sn plating(Pb-free).
2. Thermal Resistance: Mounted on PCB.
3. Available in Halogen-free epoxy by adding suffix -HF after the part nbr.
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