1SS368
SILICON EPITAXIAL PLANAR DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
W2
Applications
• Ultra high speed switching
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Maximum (Peak) Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum (Peak) Forward Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
1)
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
P
tot
T
j
T
stg
Value
85
80
100
200
1
150
1)
Unit
V
V
mA
mA
A
mW
O
125
- 55 to + 125
C
C
O
Mounted on a glass epoxy circuit board of 20 X 20 mm, pad dimension of 4 X 4 mm
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 100 mA
Reverse Current
at V
R
= 30 V
at V
R
= 80 V
Total Capacitance
at f = 1 MHz
Reverse Recovery Time
at I
F
= I
R
= 10 mA, I
rr
= 0.1 X I
R
, R
L
= 100
Ω
Symbol
V
F
I
R
C
T
t
rr
Max.
1.2
0.1
0.5
3
4
Unit
V
µA
pF
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
1SS368
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
1SS368
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-323
A
c
H
E
D
A
E
b
p
UNIT
mm
A
1.10
0.80
b
p
0.40
0.25
C
0.15
0.00
D
1.80
1.60
E
1.35
1.15
H
E
2.80
2.30
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009
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