SSG4403
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-6.1 A, -30 V, R
DS(ON)
50 mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation
with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications.
FEATURES
Low Gate Charge
Lower On-resistance
Fast Switching Characteristic
PACKAGE DIMENSIONS
SOP-8
0.40
0.90
6.20
5.80
0.25
0.19
0.25
45
o
0.375 REF
3.80
4.00
0.35
0.49
1.27Typ.
4.80
5.00
0.100.25
0
o
8
o
1.35
1.75
Dimensions in millimeters
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@Ta=25℃
I
D
@Ta=70℃
I
DM
P
D
@Ta=25℃
Tj, Tstg
Ratings
-30
±12
-6.1
-5.1
-60
2.5
-55 ~ +150
0.02
Unit
V
V
A
A
A
W
℃
W/℃
Linear Derating Factor
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient
3
Max.
Symbol
Rθj-amb
Value
50
Unit
℃/W
01-June-2005 Rev. A
Page 1 of 4
SSG4403
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-6.1 A, -30 V, R
DS(ON)
50 mΩ
P-CHANNEL ELECTRICAL CHARACTERISTICS
(Tj = 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25℃)
Drain-Source Leakage Current(Tj=55℃)
Symbol
BV
DSS
V
GS(th)
g
fs
I
GSS
I
DSS
Min.
-30
-0.7
-
-
-
-
-
Typ.
-
-
11
-
-
-
-
-
-
9.4
2
3
7.6
8.6
44.7
16.5
940
104
73
Max.
-
-1.3
-
±100
-1
-5
50
61
117
-
-
-
-
-
-
-
-
-
-
Unit
V
V
S
nA
uA
uA
Test Conditions
V
GS
=0, I
D
=-250uA
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-5A
V
GS
= ±12V
V
DS
=-30V, V
GS
=0
V
DS
=-24V, V
GS
=0
V
GS
=-10V, I
D
=-6.1A
Static Drain-Source On-Resistance
2
R
DS(ON)
-
-
mΩ
V
GS
=-4.5V, I
D
=-5A
V
GS
=-2.5 V, I
D
=-1 A
I
D
=-5 A
V
DS
=-15 V
V
GS
=-4.5 V
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
-
-
-
-
-
nC
ns
V
DS
=-15 V
I
D
=-10 V
R
G
=6
Ω
R
L
=2.4
Ω
pF
V
GS
=0 V
V
DS
=-15 V
f=1.0 MHz
SOURCE-DRAIN DIODE
Parameter
Forward On Voltage
2
Continuous Source Current (Body Diode)
Reverse Recovery Time
2
Reverse Recovery Charge
Notes:
Symbol
V
SD
I
S
T
rr
Q
rr
Min.
-
-
-
-
Typ.
-
-
22.7
15.9
Max.
-1.0
-4.2
-
-
Unit
V
A
ns
nC
Test Conditions
I
S
=-1A, V
GS
=0 V
I
S
= -5A, V
GS
= 0V, Tj=25°C
dl/dt = 100A/us
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300us, duty cycle≦2%.
2
3. Mounted on 1 in copper pad of FR4 board; 125
°C/W
when mounted on Min. copper pad.
01-June-2005 Rev. A
Page 2 of 4
SSG4403
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-6.1 A, -30 V, R
DS(ON)
50 mΩ
CHARACTERISTIC CURVE (cont’d)
01-June-2005 Rev. A
Page 4 of 4
Embedded System
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