STT3981
Elektronische Bauelemente
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications.
FEATURES
Low On-Resistance
Low Gate Charge
PACKAGE DIMENSIONS
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min.
Max.
1.10 Max
0
0.10
0.70
1.00
0.12 Ref
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 Ref
0.60 Ref
0°
10°
0.30
0.50
0.95 Ref
1.90 Ref
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Pulsed Drain Current
1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
J
, T
STG
Ratings
-20
±8
-1.6
-1.3
-8
0.8
0.006
-55 ~ +150
Unit
V
V
A
A
W
W/℃
℃
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient
3
(Max)
Symbol
R
θJA
Ratings
150
Unit
℃/W
01-June-2005 Rev. B
Page 1 of 5
STT3981
Elektronische Bauelemente
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Symbol Min
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Drain-Source Leakage Current (Tj=25℃)
Drain-Source Leakage Current (Tj=70℃)
Typ Max
Unit
Test Conditions
BV
DSS
V
GS(th)
I
GSS
I
DSS
-20
-0.4
-
-
-
-
-
-
-
-
-
100
160
260
4
-
-1.1
±100
-1
-20
150
210
300
-
V
V
nA
uA
V
GS
= 0, I
D
=250 uA
V
DS
= V
GS
, I
D
=250 uA
V
GS
= ±8 V
V
DS
= -20 V, V
GS
= 0
V
DS
= -16 V, V
GS
= 0
V
GS
= -4.5 V, I
D
= -1.9 A
Drain-Source On-Resistance
R
DS(ON)
-
-
mΩ
V
GS
= -2.5 V, I
D
= -1.6 A
V
GS
= -1.8 V, I
D
= -0.7 A
Forward Transconductance
Diode Forward Voltage
2
g
fs
V
SD
-
-
S
V
V
DS
= -5V, I
D
= -1.9A
I
S
= -1.0A, V
GS
= 0V
-0.84 -1.1
Dynamic
Total Gate Charge
2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
2
Rise Time
Turn-off Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
2. Pulse width≦300us, duty cycle≦2%.
3. Surface mounted on 1 in copper pad of FR4 board; 180 °C/W when mounted on minimum copper pad.
2
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
6
0.52
1.02
50
40
168
64
450
60
47
7.5
-
-
65
60
180
75
-
-
-
nC
I
D
= -1.9 A
V
DS
= -10 V
V
GS
= -4.5 V
V
DS
= -10 V
I
D
= -1 A
V
GEN
= -4.5 V
R
G
= 6
Ω
R
L
= 10
Ω
V
GS
= 0 V
V
D
S
= -15 V
f = 1.0 MHz
nS
pF
1. Pulse width limited by maximum junction temperature.
01-June-2005 Rev. B
Page 2 of 5
STT3981
Elektronische Bauelemente
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVES
Output Characteristics
8
7
V
GS
= 5 thru 3 V
8
7
Transfer Characteristics
T
C
= - 55 C
25 C
125 C
I D - Drain Current (A)
2.5 V
5
4
3
2
1
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
1.5 V
2V
I D - Drain Current (A)
6
6
5
4
3
2
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
0.5
V
GS
= 1.8 V
400
350
300
250
200
150
100
50
C
rss
0.0
0
1
2
3
4
5
6
7
I
D
- Drain Current (A)
0
0
4
Capacitance
)
r DS(on) - On-Resistance (
0.4
0.3
0.2
0.1
C - Capacitance (pF)
C
iss
V
GS
= 2.5 V
V
GS
= 4.5 V
C
oss
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
Gate Charg e
6
VGS - Gate-to -Sou rce Vo ltag e (V)
1.6
On-Resistance vs. Junction Temperatur e
V
GS
= 4.5 V
I
D
= 1.9 A
5
V
DS
= 10 V
I
D
= 1.9 A
1.4
r
DS(on)
- On-Resiistance
(Normalized)
4
1.2
3
1.0
2
1
0.8
0
0
1
2
3
4
5
6
7
0.6
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
T
J
- Junction Temperature ( C)
01-June-2005 Rev. B
Page 3 of 5
STT3981
Elektronische Bauelemente
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
Source-Drain Diode Forward Voltage
10
0.5
On-Resistance vs. Gate-to-Source Voltage
0.4
I
D
= 1.9 A
I
S
- Source Current (A)
r DS(on) - On-Resistance (
)
1
T
J
= 150 C
T
J
= 25 C
0.1
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain Voltage (V)
0.3
0.2
0.1
0.0
0
1
2
3
4
5
6
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage
0.3
25
Single Pulse Power, Junction-to-Ambient
0.2
V GS(th) Variance (V)
20
I
D
= 250 A
Power (W)
0.1
15
0.0
10
- 0.1
5
- 0.2
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (sec)
1
10
T
J
- Temperature ( C)
100
Safe Operating Area, Junction-to-Case
I
DM
Limited
10
I
D
- Drain Current (A)
r
DS(on)
Limited
1
I
D(on)
Limited
0.1
T
C
= 25 C
Single Pulse
BV
DSS
Limited
1
10
1 ms
10 ms
100 ms
10 s, 1 s
dc
0.01
0.1
100
V
DS
- Drain-to-Source Voltage (V)
01-June-2005 Rev. B
Page 4 of 5
STT3981
Elektronische Bauelemente
-1.6 A, -20 V, RDS(ON) 180 mΩ
P-Channel Enhancement Mode Mos.FET
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 132 C/W
3. T
JM
-
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
- 4
10
- 3
10
- 2
10
-1
1
10
100
600
Square Wave Pulse Duration (sec)
2
1
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
- 3
10
- 2
10
- 1
Square Wave Pulse Duration (sec)
1
10
01-June-2005 Rev. B
Page 5 of 5
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