S1A THRU S1M
SURFACE MOUNT GENERAL RECTIFIER
Reverse Voltage – 50 to 1000 V
Forward Current – 1 A
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Glass passivated chip junction
• For surface mount application
• Low profile package
• Built-in strain relief, ideal for automated placement
Mechanical Data
•
Case:
SMA (DO-214AC), molded plastic
•
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
•
Polarity:
Color band denotes cathode end
Absolute Maximum Ratings and Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Symbols S1A S1B S1D S1G S1J S1K S1M Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current , 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
Method)
Maximum Forward Voltage at 1 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
at V
R
= 4 V, f = 1 MHz
Typical Thermal Resistance
1)
Operating and Storage Temperature Range
1)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
50
35
50
100
70
100
200
140
200
400
280
400
1
30
1.1
5
50
12
75
27
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
μA
pF
O
at T
A
= 25
O
C
at T
A
= 125
O
C
I
R
C
J
R
θ
JA
R
θ
JL
T
J
, T
S
C/W
O
- 55 to +1 50
C
Thermal resistance from junction to ambient from junction to lead mounted on P.C.B. with 0.2 X 0.2" (5 X 5 mm) copper pad
areas
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/04/2008
S1A THRU S1M
FIG.1-FORWARD DERATING CURVE
FIG.2- PEAK FORWARD SURGE CURRENT
100
AVERAGE FORWARD CURRENT, A
PEAK FORWARD SURGE CURRENT, A
1.2
1
0.8
0.6
RESISTIVE OR
INDUCTIVE LOAD
T
L
=110 C
8.3ms Single half Sine Wave
(JEDEC Method)
S1(A.J)
10
S1(K.M)
S1(A.J)
0.4
0.2
0
0
20
40
60
80
100
120 140
160
0.2x0.2(5.0x5.0mm)
Thick copper pad areas
S1(K.M)
1
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE, ( C)
FIG.3-TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT(A)
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT( A)
100
100
10
10
T
J
=125 C
1
o
1
T
J
=75 C
0.1
T
J
=25 C
PULSE WIDTH=300
s
1% DUTY CYCLE
0.1
0.01
0.4 0.6
0.01
T
J
=25 C
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE (V)
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTS,%
FIG.5- TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE (
o
C/W)
100
JUNCTION CAPACITANCE, pF
FIG.6- TRANSIENT THERMAL
IMPEDANCE
1000
T
J
=25 C
f=1.0MHz
Vsig=50mVp-p
S1(K.M)
100
10
S1(A.J)
10
1
0.01
0.1
1
10
100
1
0.01
0.1
1
10
100
t, PULSE DURATION
REVERSE VOLTAGE, V
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/04/2008
Microcontroller MCU
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