1SS171
SILICON EPITAXIAL PLANAR DIODE
for high speed switching circuits
Max. 0.5
Features
• High switching speed
• Small terminal capacitance
• Large forward current
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current (at t = 1 s)
Junction Temperature
Storage Temperature Range
Symbol
V
RRM
V
R
I
F(AV)
I
FRM
I
FSM
T
J
T
stg
Value
80
80
200
600
1
175
- 65 to + 175
Unit
V
V
mA
mA
A
O
C
C
O
Electrical Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 200 mA
Reverse Current
at V
R
= 15 V
at V
R
= 75 V
Terminal Capacitance
at V
R
= 0 V, f = 1 MHz
Reverse Recovery Time
at I
F
= 10 mA, I
rr
= 0.1 I
R
, R
L
= 100
Ω
Symbol
V
F
I
R
C
T
t
rr
Max.
1.1
Unit
V
50
500
4
20
nA
pF
ns
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/06/2007
1SS171
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/06/2007
Analogue and Mixed Signal
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