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DH40225-60T10

Description
SILICON, PIN DIODE, SOD-323, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size53KB,2 Pages
ManufacturerRakon Limited
Download Datasheet Parametric View All

DH40225-60T10 Overview

SILICON, PIN DIODE, SOD-323, PLASTIC PACKAGE-2

DH40225-60T10 Parametric

Parameter NameAttribute value
Parts packaging codeSOD
package instructionR-PDSO-G2
Contacts2
Manufacturer packaging codeSOD-323
Reach Compliance Codeunknown
ECCN codeEAR99
applicationATTENUATOR
ConfigurationSINGLE
Maximum diode capacitance0.3 pF
Diode component materialsSILICON
Maximum diode forward resistance13 Ω
Diode typePIN DIODE
JESD-30 codeR-PDSO-G2
Minority carrier nominal lifetime7 µs
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
SILICON PIN DIODES
Plastic package Surface Mount attenuating silicon PIN diodes
PLASTIC PACKAGE SURFACE MOUNT ATTENUATING
SILICON PIN DIODES
Description
TEMEX uses its proprietary technology to manufacture its Silicon PIN diodes in plastic package.
This product family is designed for a low cost, medium to high volume market that may be supplied
in tape and reel for automated pick and place assembly on surface mount circuit boards.
The use of this technology eliminates wire bonding on to the chips.
Applications
Typical applications include variable RF attenuators and AGC (Automatic Gain Control) circuits,
from MHz to several GHz.
The attenuating Pin diode uses properties of variation of forward series resistance versus the DC
forward bias current. In order to obtain the best dynamic range, a single diode attenuator may be used
in series or shunt configuration or designed as a multiple diode circuit (T or p circuit), where the device
may be matched through the attenuation range.
Note:
To reduce the distortion, it is necessary to verify and design with the following formula:
Î
HF
πτ
l
I
DC
F << 1
Î
HF
:
RF peak current (A)
Diode minority carrier lifetime (s)
DC bias current (A)
Application frequency (Hz)
τ
l
:
I
DC
:
F
:
Typical performance curve
R
SF
(Ω)
1000
Typical series resistance versus forward current
100
10
DH40144
DH40225
DH40141
1
0.1
12-8
Vol. 1
1
I
F
(mA)
10
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.com
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