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P086CH06CJ0

Description
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),315A I(T),TO-200AB
CategoryAnalog mixed-signal IC    Trigger device   
File Size139KB,2 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

P086CH06CJ0 Overview

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),315A I(T),TO-200AB

P086CH06CJ0 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time25 µs
Critical rise rate of minimum off-state voltage20 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
Maximum leakage current20 mA
On-state non-repetitive peak current1700 A
Maximum on-state current315000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage600 V
surface mountNO
Trigger device typeSCR
Base Number Matches1
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