RGP30A thru RGP30M
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction
Fast Switching Rectifier
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
d*
te
Features
ten
Pa
Dimensions in
inches and
(millimeters)
Reverse Voltage
50 to 1000V
Forward Current
3.0A
0.375 (9.5)
0.285 (7.2)
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• Cavity-free glass passivated junction
• Capable of meeting environmental standards of
MIL-S-19500
• High temperature metallurgically bonded construction
• 3.0 Ampere operation at T
A
=55°C with no thermal runaway
• Typical I
R
less < 0.2µA • Fast switching for high efficiency
• High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
*
Glass-plastic encap-
®
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
sulation technique is
covered by
Patent No. 3,996,602,
and brazed-lead
assembly by Patent
No. 3,930,306
Mechanical Data
Case:
JEDEC DO-201AD, molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 oz., 1.12 g
Packaging codes/options:
1/Bulk - 1.5K per container, 15K per box
4/1.4K per 13" reel, 5.6K per box
23/1K per Ammo. mag., 9K per box
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
= 55°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum full load reverse current, full cycle
average 0.375" (9.5mm) lead length at T
A
= 55°C
Typical thermal resistance
(1)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
R
ΘJA
RGP
30A
50
35
50
RGP
30B
100
70
100
RGP
30D
200
140
200
RGP
30G
400
280
400
3.0
125
100
20
RGP
30J
600
420
600
RGP
30K
800
560
800
RGP
30M
1000
700
1000
Unit
V
V
V
A
A
µA
°C/W
°C
Operating junction and storage temperature range T
J
,T
STG
–65 to +175
Electrical Characteristics
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
Typical junction capacitance at 4.0V, 1MHz
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 3.0A
T
A
= 25°C
T
A
= 125°C
V
F
I
R
t
rr
C
J
150
1.3
5.0
100
250
60
500
V
µA
ns
pF
Notes:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88704
18-Nov-02
www.vishay.com
1
RGP30A thru RGP30M
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 — Forward Current
Derating Curve
Average Forward Rectified Current (A)
4.0
Resistive or Inductive Load
200
Fig. 2 — Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
3.0
2.0
1.0
0.375" (9.5mm) Lead Length
0
0
25
50
75
100
125
150
175
10
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 — Typical Instantaneous
Forward Characteristics
10
20
Fig. 4 — Typical Reverse
Characteristics
Instantaneous Reverse Leakage
Current (µA)
10
T
J
= 125°C
Instantaneous Forward Current (A)
1
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
T
J
= 100°C
1
T
J
= 75°C
0.1
T
J
= 25°C
0.1
0.01
0.4
0.01
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 — Typical Junction
Capacitance
100
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
Junction Capacitance (pF)
10
1
10
100
Reverse Voltage (V)
www.vishay.com
2
Document Number 88704
18-Nov-02
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