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AP18T10GJ

Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size93KB,4 Pages
ManufacturerAPEC
Download Datasheet Parametric Compare View All

AP18T10GJ Overview

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP18T10GJ Parametric

Parameter NameAttribute value
MakerAPEC
Parts packaging codeTO-251
package instructionROHS COMPLIANT PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.16 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)30 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
AP18T10GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
160mΩ
9A
S
Description
G
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP18T10GJ)
are available for low-profile applications.
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
+20
9
5.6
30
28
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
4.5
62.5
110
Units
℃/W
℃/W
℃/W
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1
200903052

AP18T10GJ Related Products

AP18T10GJ AP18T10GH
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker APEC APEC
Parts packaging code TO-251 TO-252
package instruction ROHS COMPLIANT PACKAGE-3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 4
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V
Maximum drain current (ID) 9 A 9 A
Maximum drain-source on-resistance 0.16 Ω 0.16 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-251 TO-252
JESD-30 code R-PSIP-T3 R-PSSO-G2
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 30 A 30 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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