BH616UV8011TIP55 datasheet, PDF

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BH616UV8011TIP55: DescriptionStandard SRAM, 512KX16, 55ns, CMOS, PDSO48, 12 X 20 MM, ROHS COMPLIANT, TSOP1-48; Categorystorage storage; File Size233KB，11 Pages; ManufacturerBrilliance

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BH616UV8011TIP55 Overview

Standard SRAM, 512KX16, 55ns, CMOS, PDSO48, 12 X 20 MM, ROHS COMPLIANT, TSOP1-48

BH616UV8011TIP55 Parametric

Parameter Name	Attribute value
Parts packaging code	TSOP1
package instruction	TSOP1,
Contacts	48
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
Maximum access time	55 ns
JESD-30 code	R-PDSO-G48
length	18.4 mm
memory density	8388608 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
width	12 mm
Base Number Matches	1

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Ultra Low Power/High Speed CMOS SRAM

512K X 16 bit

Pb-Free and Green package materials are compliant to RoHS

BH616UV8011

FEATURES

Wide V

low operation voltage : 1.65V ~ 3.6V

Ultra low power consumption :

Operation current : 12mA (Max.)at 55ns

= 3.6V

2mA (Max.) at 1MHz

Standby current : 15uA (Max.) at 3.0V/85 C

Data retention current : 7uA (Max.) at 85 C

= 1.2V

High speed access time :

-55/-70

55ns (Max.) at V

=3V

70ns (Max.) at V

=1.8V

Automatic power down when chip is deselected

Easy expansion with CE1, CE2 and OE options

I/O Configuration x8/x16 selectable by LB and UB pin.

Three state outputs and TTL compatible

Fully static operation, no clock, no refresh

Data retention supply voltage as low as 1.0V

DESCRIPTION

The BH616UV8011 is a high performance, ultra low power CMOS

Static Random Access Memory organized as 524,288 by 16 bits and

operates in a wide range of 1.65V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with maximum standby current of

15uA at 3.6V at 85 C and maximum access time of 55ns/70ns at

3V/1.8V .

Easy memory expansion is provided by an active LOW chip enable

(CE1), an active HIGH chip enable (CE2) and active LOW output

enable (OE) and three-state output drivers.

The BH616UV8011 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BH616UV8011 is available in DICE form, JEDEC standard

48-pin TSOP-I and 48-ball BGA package.

POWER CONSUMPTION

POWER DISSIPATION

PRODUCT

FAMILY

BH616UV8011DI

BH616UV8011AI

BH616UV8011TI

Industrial

-40 C to +85 C

15uA

12uA

2mA

6mA

12mA

1.5mA

5mA

8mA

OPERATING

TEMPERATURE

STANDBY

CCSB1

, Max)

Operating

, Max)

PKG TYPE

=1.8V

10MHz

Max.

=3.6V

=1.8V

1MHz

=3.6V

10MHz

Max.

1MHz

DICE

BGA-48-0608

TSOP I-48

PIN CONFIGURATIONS

A15

A14

A13

A12

A11

A10

CE2

A18

A17

A16

VSS

DQ15

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

VSS

CE1

BLOCK DIAGRAM

A12

A11

A10

Address

Input

Buffer

Row

Decoder

1024

Memory Array

BH616UV8011TI

1024 x 8192

8192

DQ0

DQ15

CE2

CE1

Data

Input

Buffer

Data

Output

Buffer

512

Column Decoder

Address Input Buffer

Control

Column I/O

Write Driver

Sense Amp

DQ8

DQ9

VSS

VCC

DQ14

DQ15

A18

DQ10

DQ11

DQ12

DQ13

A17

A14

A12

A16

A15

A13

A10

CE1

DQ1

DQ3

DQ4

DQ5

A11

CE2

DQ0

DQ2

VCC

VSS

DQ6

DQ7

A18 A17 A15 A14 A13 A16 A2 A1 A0

48-ball BGA top view

Brilliance Semiconductor, Inc.

reserves the right to change products and specifications without notice.

Detailed product characteristic test report is available upon request and being accepted.

R0201-BH616UV8011

Revision

1.2

Oct.

2008

BH616UV8011TIP55 Related Products

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Description	Standard SRAM, 512KX16, 55ns, CMOS, PDSO48, 12 X 20 MM, ROHS COMPLIANT, TSOP1-48	Standard SRAM, 512KX16, 70ns, CMOS, PDSO48, 12 X 20 MM, ROHS COMPLIANT, TSOP1-48	Standard SRAM, 512KX16, 70ns, CMOS, ROHS COMPLIANT, DIE PACKAGE	Standard SRAM, 512KX16, 55ns, CMOS, GREEN, DIE PACKAGE	Standard SRAM, 512KX16, 70ns, CMOS, GREEN, DIE PACKAGE	Standard SRAM, 512KX16, 55ns, CMOS, ROHS COMPLIANT, DIE PACKAGE	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, GREEN, BGA-48	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 6 X 8 MM, ROHS COMPLIANT, BGA-48	Standard SRAM, 512KX16, 55ns, CMOS, PDSO48, 12 X 20 MM, GREEN, TSOP1-48
Parts packaging code	TSOP1	TSOP1	DIE	DIE	DIE	DIE	BGA	BGA	TSOP1
package instruction	TSOP1,	TSOP1,	DIE,	DIE,	DIE,	DIE,	TFBGA,	TFBGA,	TSOP1,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	55 ns	70 ns	70 ns	55 ns	70 ns	55 ns	70 ns	70 ns	55 ns
JESD-30 code	R-PDSO-G48	R-PDSO-G48	R-XUUC-N	R-XUUC-N	R-XUUC-N	R-XUUC-N	R-PBGA-B48	R-PBGA-B48	R-PDSO-G48
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1	1
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	TSOP1	DIE	DIE	DIE	DIE	TFBGA	TFBGA	TSOP1
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V	1.65 V
Nominal supply voltage (Vsup)	3 V	1.8 V	1.8 V	3 V	1.8 V	3 V	1.8 V	1.8 V	3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING	NO LEAD	NO LEAD	NO LEAD	NO LEAD	BALL	BALL	GULL WING
Terminal location	DUAL	DUAL	UPPER	UPPER	UPPER	UPPER	BOTTOM	BOTTOM	DUAL
Base Number Matches	1	1	1	1	1	1	1	1	1
Contacts	48	48	-	-	-	-	48	48	48
length	18.4 mm	18.4 mm	-	-	-	-	8 mm	8 mm	18.4 mm
Number of terminals	48	48	-	-	-	-	48	48	48
Maximum seat height	1.2 mm	1.2 mm	-	-	-	-	1.2 mm	1.2 mm	1.2 mm
Terminal pitch	0.5 mm	0.5 mm	-	-	-	-	0.75 mm	0.75 mm	0.5 mm
width	12 mm	12 mm	-	-	-	-	6 mm	6 mm	12 mm

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