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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BSR40; BSR41; BSR42; BSR43
NPN medium power transistors
Product data sheet
Supersedes data of 1999 Apr 28
2004 Dec 13
NXP Semiconductors
Product data sheet
NPN medium power transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
Thick and thin-film circuits
•
Telephony and general industrial applications.
DESCRIPTION
NPN medium power transistor in a SOT89 plastic
package. PNP complements: BSR30; BSR31 and BSR33.
MARKING
TYPE
NUMBER
BSR40
BSR41
MARKING
CODE
AR1
AR2
TYPE
NUMBER
BSR42
BSR43
MARKING
CODE
AR3
AR4
PINNING
PIN
1
2
3
emitter
collector
base
BSR40; BSR41;
BSR42; BSR43
DESCRIPTION
2
3
1
sym042
3
2
1
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BSR40
BSR41
BSR42
BSR43
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
2004 Dec 13
2
NXP Semiconductors
Product data sheet
NPN medium power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
BSR40; BSR41
BSR42; BSR43
V
CEO
collector-emitter voltage
BSR40; BSR41
BSR42; BSR43
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
CONDITIONS
open emitter
BSR40; BSR41; BSR42;
BSR43
MIN.
−
−
−
−
−
−
−
−
−
−65
−
−65
MAX.
70
90
60
80
5
1
2
0.2
1.35
+150
150
+150
V
V
V
V
V
A
A
A
W
UNIT
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
93
13
UNIT
K/W
K/W
2004 Dec 13
3
NXP Semiconductors
Product data sheet
NPN medium power transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
BSR40; BSR42
BSR41; BSR43
DC current gain
BSR40; BSR42
BSR41; BSR43
DC current gain
BSR40; BSR42
BSR41; BSR43
V
CEsat
V
BEsat
C
c
C
e
f
T
t
on
t
off
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.01.
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
CONDITIONS
I
E
= 0 A; V
CB
= 60 V
BSR40; BSR41; BSR42;
BSR43
MIN.
−
−
−
10
30
MAX.
100
50
100
−
−
120
300
−
−
250
500
1
1.2
12
90
−
UNIT
nA
μA
nA
I
E
= 0 A; V
CB
= 60 V; T
j
= 150
°C
I
C
= 0 A; V
EB
= 5 V
I
C
= 100
μA;
V
CE
= 5 V; note 1
I
C
= 100 mA; V
CE
= 5 V; note 1
40
100
I
C
= 500 mA; V
CE
= 5 V; note 1
30
50
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 150 mA; I
B
= 15 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
E
= i
e
= 0 A; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0 A; V
EB
= 0.5 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
I
Con
= 100 mA; I
Bon
= 5 mA;
I
Boff
=
−5
mA
−
−
−
−
−
−
100
−
−
mV
mV
V
V
pF
pF
MHz
Switching times (between 10% and 90% levels)
turn-on time
turn-off time
250
1
ns
μs
2004 Dec 13
4
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