Edition 2009-01-13
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2009.
All Rights Reserved.
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BGA735L16 - Low Power Tri-Band UMTS LNA
Table of Contents
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2.9.1
2.9.2
2.10
2.10.1
2.10.2
2.10.3
2.11
2.11.1
2.12
2.13
2.14
2.15
2.16
2.17
2.18
2.19
2.20
2.21
2.22
2.23
3
3.1
3.2
3.3
3.4
3.5
4
4.1
4.2
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Band Select / Gain Control Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Supply current characteristics;
T
A
= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Signal Characteristics;
T
A
= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Measured RF Characteristics Low Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Measured RF Characteristics UMTS Bands V / VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Measured RF Characteristics UMTS Band VIII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Measured RF Characteristics Mid Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Measured RF Characteristics UMTS Band II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Measured RF Characteristics UMTS Bands III / IX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Measured RF Characteristics UMTS Band IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Measured RF Characteristics High Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Measured RF Characteristics UMTS Bands I / X . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Measured Performance Low Band (Band V) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 16
Measured Performance Low Band (Band V) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . 17
Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 18
Measured Performance Low Band (Band V) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 20
Measured Performance Mid Band (Band II) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 21
Measured Performance Mid Band (Band II) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 22
Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 23
Measured Performance Mid Band (Band II) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 25
Measured Performance High Band (Band I) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 26
Measured Performance High Band (Band I) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . 27
Measured Performance High Band (Band I) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 28
Measured Performance High Band (Band I) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 30
Application Circuit and Block Diagram
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS bands I, II and V Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS bands I, III and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS bands I, IV and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
31
31
32
33
34
35
Physical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Data Sheet
4
V3.1, 2009-01-13
BGA735L16 - Low Power Tri-Band UMTS LNA
Description
1
Description
The BGA735L16 is a highly flexible, high linearity tri-band (2100, 1900/1800/2100, 800/900 MHz) low noise
amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the
BGA735L16 uses an advanced biasing concept in order to achieve high linearity.
The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-
chip as well as matching off chip. Because the matching is off chip, different UMTS bands can be easily applied.
For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input
and output matching network.
Note: UMTS bands I / II / V is the standard band combination for this product requiring no external output matching
network.
Features
• Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands)
• Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode
(800 MHz / 1900 MHz / 2100 MHz)
• Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all
bands)
• Standby mode (< 2
µA
typ.)
• Output internally matched to 50
Ω
• Inputs pre-matched to 50
Ω
• 2kV HBM ESD protection
• Low external component count
• Small leadless TSLP-16-1 package (2.3 x 2.3 x 0.39 mm)
• Pb-free (RoHS compliant) package
TSLP-16-1 package
Figure 1
Type
BGA735L16
Data Sheet
Block diagram of triple-band LNA
Package
TSLP-16-1
Marking
BGA735
5
Chip
T1530
V3.1, 2009-01-13
京公网安备 11010802033920号
EEWORLD
