CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Digital Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHEMG4PT
CURRENT 100 mAmpere
FEATURE
* Small surface mounting type. (SOT-553)
* High current gain.
* Suitable for high packing density.
*
*
*
*
Low colloector-emitter saturation.
High saturation current capability.
Both the CHDTC114T in one package.
Built in bias resistor(R1=10kΩ, Typ. )
(4)
(3)
SOT553
0.50
0.9~1.1
(5)
(1)
0.50
1.5~1.7
0.15~0.3
MARKING
* G4
0.5~0.6
1.1~1.3
0.19~0.18
1.5~1.7
CIRCUIT
3
R1
2
R1
1
4
5
Dimensions in millimeters
SOT553
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CC
V
IN
I
O
DC Output current
I
C(Max.)
P
TOT
T
STG
T
J
Rθ
J-S
Note
1. Transistor mounted on an FR4 printed-circuit board.
Total power dissipation
Storage temperature
Junction temperature
Thermal resistance
junction - Ambient Air
T
amb
≤
25
O
C, Note 1
PARAMETER
Supply voltage
Input voltage
−
−
−
−55
−
−
CONDITIONS
−
MIN.
MAX.
50
-5
100
mA
100
200
+150
150
625
mW
O
UNIT
V
V
C
C
C/W
2004-07
O
O
RATING CHARACTERISTIC ( CHEMG4PT )
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
PARAMETER
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
CONDITIONS
I
C
=50uA
I
E
=50uA
V
CB
=50V
V
EB
=4V
I
C
/I
B
=1mA/0.1mA
I
C
=1mA; V
CE
=5.0V
I
E
=-5mA, V
CE
=10.0V
f=100MHz
MIN.
50
50
5.0
−
−
−
100
7.0
−
−
−
−
−
−
−
TYP.
−
−
−
MAX.
V
V
V
UNIT
Collector-emitter breakdown voltage
I
C
=1.0mA
0.5
0.5
0.3
600
13.0
−
uA
uA
V
KΩ
MHz
DC current gain
Input resistor
Transition frequency
250
10.0
250
Note
1.Pulse test: tp≤300uS;
δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHEMG4PT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
10
V
O
=0.2V
Fig.2 Output current vs. input voltage
(OFF characteristics)
100m
V
CC
=5V
Ta= 75
O
C
25
O
C
-25
O
C
OUTPUT CURRENT : Io
(A)
INPUT VOLTAGE : V
I(on)
(V)
10m
1
Ta =- 25
O
C
25
O
C
=
75
O
C
1m
100u
10u
100m
0
10m
20m
30m
40m
50m
1u
0
1
2
3
4
5
6
7
8
9
10
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
Fig.3 DC current gain vs. output
current
1k
V
O
=10V
OUTPUT VOLTAGE : V
O(on)
(V)
Fig.4 Output voltage vs. output
current
1
l
O
/l
I
=10
DC CURRENT GAIN : G
I
100
Ta= 75
O
C
25
O
C
-25
O
C
100m
Ta= 75
O
C
25
O
C
-25
O
C
10
10m
10
1m
10m
OUTPUT CURRENT : I
O
(A)
100m
1m
0
10m
20m
30m
40m
50m
OUTPUT CURRENT : I
O
(A)
Discrete Device
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